Impact of Domain Wall Motion on the Memory Window in a Multidomain Ferroelectric FET
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
Funder
Swarna Jayanti Fellowship
FIST Scheme of the Department of Science and Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9927475/09893842.pdf?arnumber=9893842
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2. Multidomain Interactions in Perpendicular Magnetic Tunnel Junction (p-MTJ): Enabling Multistate MRAM;IEEE Transactions on Electron Devices;2023-05
3. Ferroelectric FDSOI FET modeling for memory and logic applications;Solid-State Electronics;2023-02
4. Dynamics and Modeling of Multidomains in Ferroelectric Tunnel Junction—Part-II: Electrostatics and Transport;IEEE Transactions on Electron Devices;2023-01
5. On the Memory Window Variability in a 3-D Multi-Granular Ferroelectric FET Including Grain Boundaries;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11
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