Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology
Author:
Affiliation:
1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea
2. School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Funder
NRF
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9811240/09785806.pdf?arnumber=9785806
Reference25 articles.
1. Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays
2. Two Memristors-Based XOR Logic Demonstrated With Encryption/Decryption
3. Voltage-Controlled Magnetic Tunnel Junctions for Processing-In-Memory Implementation
4. Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering
5. Implementation of Boolean Logic Functions in Charge Trap Flash for In-Memory Computing
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