Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon-Reference-Cited by-同舟云学术

Integration of Ferroelectric Hf_xZr_1-xO₂ on Vertical III-V Nanowire Gate-All-Around FETs on Silicon

Published:2022-06 Issue:6 Volume:43 Page:854-857
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Persson Anton E. O.¹^ORCID,Zhu Zhongyunshen¹^ORCID,Athle Robin²,Wernersson Lars-Erik¹^ORCID

Affiliation:

1. Department of Electrical and Information Technology, Lund University, Lund, Sweden

2. Department of Electrical and Information Technology and the NanoLund, Lund University, Lund, Sweden

Funder

Swedish Research Council

Electronics beyond kT/q

European Research Council

Dynamic Properties of Ferroelectric III-V MOSFETs

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9780621/09765979.pdf?arnumber=9765979

Reference25 articles.

1. First experimental demonstration of negative capacitance InGaAs MOSFETs;luc;Symp VLSI Technol Dig Tech Papers,2018

2. Hf0.5Zr0.5O2-Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range

3. High frequency III–V nanowire MOSFETs

4. Current percolation path impacting switching behavior of ferroelectric FETs

5. Strategy toward HZO BEOL-FeRAM with low-voltage operation (? 1.2 V), low process temperature, and high endurance by thickness scaling;tahara;Proc Symp VLSI Technol,2021

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