Positive-Bias-Temperature-Instability Induced Random-Trap-Fluctuation Enhanced Physical Unclonable Functions on 14-nm nFinFETs
Author:
Affiliation:
1. Department of Electrical Engineering, National Central University, Taoyuan, Taiwan
Funder
Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9866921/09815328.pdf?arnumber=9815328
Reference19 articles.
1. The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors
2. The understanding of the trap induced variation in bulk tri-gate devices by a novel random trap profiling (RTP) technique
3. A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform
4. Matching properties of MOS transistors
5. The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors
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1. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms;Micromachines;2024-01-12
2. Oxide Breakdown Spot Spatial Patterns as Fingerprints for Optical Physical Unclonable Functions;IEEE Electron Device Letters;2023-10
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