Single-Step Electron Beam Evaporation for Schottky/Ohmic Drain in GaN-on-Si HEMTs Fabrication
Author:
Affiliation:
1. School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, China
2. School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Funder
Technology Innovation and Application Demonstration Key Project of Chongqing Municipality
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9965979/09926069.pdf?arnumber=9926069
Reference14 articles.
1. Ti/Al/Ti/TiW Au-free low temperature ohmic contacts for un-doped AlGaN/GaN HEMTs
2. Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT
3. Fabrication and Performance of Ti/Al/Ni/TiN Au-Free Ohmic Contacts for Undoped AlGaN/GaN HEMT
4. Schottky Source/Drain InAlN/AlN/GaN MISHEMT With Enhanced Breakdown Voltage
5. Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement
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1. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors;Journal of Semiconductors;2024-09-01
2. High-frequency Full-bridge 48V DC-5V DC LLC Resonant Converter with AlGaN/GaN HEMTs;2023 5th International Conference on Electrical Engineering and Control Technologies (CEECT);2023-12-15
3. Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation;Results in Physics;2023-10
4. 660-V/1.99-m$\Omega $.cm$^{\text{2}}$ Low-Current-Collapse p-GaN/AlGaN/GaN HEMTs With Selective Regrowth AlN/AlGaN Strain Layers;IEEE Transactions on Electron Devices;2023
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