Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O₂-Reference-Cited by-同舟云学术

Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf₀.₁Zr₀.₉O₂

Published:2022-09 Issue:9 Volume:43 Page:1559-1562
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liao C.-Y.¹^ORCID,Hsiang K.-Y.¹^ORCID,Lin C.-Y.¹,Lou Z.-F.¹,Li Z.-X.¹,Tseng H.-C.¹,Chang F.-S.¹,Ray W.-C.¹,Wang C.-C.¹,Lee J.-Y.¹,Chen P.-H.²,Tsai J.-H.²^ORCID,Liao M.-H.³^ORCID,Lee M. H.¹^ORCID

Affiliation:

1. Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei, Taiwan

2. Department of Electrical Engineering, National Taiwan Normal University, Taipei, Taiwan

3. Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan

Funder

Ministry of Science and Technology

Taiwan Semiconductor Research Institute (TSRI) and Nano Facility Center (NFC), Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9866921/09825686.pdf?arnumber=9825686

Reference26 articles.

1. Time-Resolved Measurement of Negative Capacitance

2. Experimental Study on the Transient Response of Negative Capacitance Tunnel FET

3. Dynamics of HfZrO2 Ferroelectric Structures: Experiments and Models

4. Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

5. Unveiling the Apparent “Negative Capacitance” Effects Resulting From Pulse Measurements of Ferroelectric-Dielectric Bilayer Capacitors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distribution of the built-in field extracted from switching dynamics in HfO2-based ferroelectric capacitor;AIP Advances;2024-06-01

2. A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor;IEEE Transactions on Electron Devices;2023-09

3. Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design;IEEE Transactions on Electron Devices;2023-08

4. Monte Carlo Modeling of Growth Delay in Atomic Layer Deposited WS₂ on SiO₂ Substrate Based on Kinetic Extrapolation of Reaction Entropy and Enthalpy;IEEE Transactions on Nanotechnology;2023