Band Gap Engineering of Amorphous MgSnO Film for Deep-Ultraviolet Photodetection
Author:
Affiliation:
1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen, China
2. School of Materials Science and Technology, Xiangtan University, Xiangtan, China
Funder
Guangdong Natural Science Funds for Distinguished Young Scholars
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10027614/09998993.pdf?arnumber=9998993
Reference35 articles.
1. Short-wavelength solar-blind detectors-status, prospects, and markets
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3. Bandgap engineering of Gallium oxides by crystalline disorder
4. Bandgap Engineering of ZrGaO Films for Deep-Ultraviolet Detection
5. Vacuum ultraviolet photovoltaic arrays
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