Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction-Reference-Cited by-同舟云学术

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Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

Published:2023-01 Issue:1 Volume:44 Page:164-167
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Koo Ryun-Han¹,Shin Wonjun¹^ORCID,Min Kyung Kyu¹^ORCID,Kwon Dongseok¹^ORCID,Kim Dae Hwan²^ORCID,Kim Jae-Joon¹^ORCID,Kwon Daewoong³^ORCID,Lee Jong-Ho¹^ORCID

Affiliation:

1. Inter-University Semiconductor Research Center (ISRC), Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea

2. School of Electrical Engineering, Kookmin University, Seoul, South Korea

3. Department of Electrical Engineering, Inha University, Incheon, South Korea

Funder

Institute of Information and Communications Technology Planning and Evaluation (IITP) Grant through by the Korea Government

Brain Korea 21 Plus Project

SK Hynix

National Research Foundation of Korea

Korea Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10001839/09955552.pdf?arnumber=9955552

Reference31 articles.

1. Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy

2. Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

3. Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor

4. Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes

5. Guidelines for Ferroelectric-Semiconductor Tunnel Junction Optimization by Band Structure Engineering

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1. Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions;Journal of Physics D: Applied Physics;2024-08-29

2. Examination of Ferroelectric Domain Dynamics in HZO Under Endurance Cycling Stress;IEEE Electron Device Letters;2024-06

3. Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity;Chaos, Solitons & Fractals;2024-06

4. Toward Ideal Low‐Frequency Noise in Monolayer CVD MoS₂ FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management;Advanced Science;2024-05-21

5. Artificial Neural Network Classification Using Al-Doped HfO_x-Based Ferroelectric Tunneling Junction with Self-Rectifying Behaviors;ACS Materials Letters;2024-05-13

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