A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor-Reference-Cited by-同舟云学术

A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

Published:2022-08 Issue:8 Volume:43 Page:1271-1274
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ge Lei¹^ORCID,Peng Yan¹,Li Bin¹,Chen Xiaohua¹,Xu Mingsheng¹,Wang Xiwei¹,Cui Yingxin¹,Wang Dufu²,Han Jisheng¹,Cheong Kuan Yew³^ORCID,Tanner Philip⁴^ORCID,Zhao Ming⁵^ORCID,Xu Xiangang¹

Affiliation:

1. State Key Laboratory of Crystal Materials, Institute of Novel Semiconductor Materials, Shandong University, Jinan, China

2. Jinan Diamond Technology Company Ltd., Jinan, China

3. Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, University Sains Malaysia, Nibong Tebal, Penang, Malaysia

4. Queensland Micro and Nanotechnology Centre, Griffith University, Nathan, QLD, Australia

5. Inter-University Micro-Electronics Centre (IMEC), Leuven, Belgium

Funder

Major Science and Technology Innovation Project of Shandong Province

Tang Scholar of Shandong University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9841091/09791266.pdf?arnumber=9791266

Reference33 articles.