High-Entropy True Random Number Generator Based on Memristor Reset Switching-Reference-Cited by-同舟云学术

High-Entropy True Random Number Generator Based on Memristor Reset Switching

Published:2022-09 Issue:9 Volume:43 Page:1459-1462
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang Fan¹,Wang Yi¹^ORCID,Wang Chengxu¹,Ma Yinghao¹,Wang Xingsheng¹^ORCID,Miao Xiangshui¹^ORCID

Affiliation:

1. School of Integrated Circuits, the School of Optical and Electronic Information, and the Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China

Funder

National Key Research and Development Program of China

Hubei Key Laboratory of Advanced Memories

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9866921/09845418.pdf?arnumber=9845418

Reference32 articles.

1. A statistical test suite for random and pseudorandom number generators for cryptographic applications;rukhin,2010

2. A true random number generator using time-dependent dielectric breakdown;liu;Symp VLSI Circuits Dig Tech Papers,2011

3. A 28NM Integrated True Random Number Generator Harvesting Entropy from MRAM

4. True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

5. True random number generator using current difference based on a fractional stochastic model in 40-nm embedded ReRAM

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