A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET-Reference-Cited by-同舟云学术

A Steep-Slope Phenomenon by Gate Charge Pumping in a MOSFET

Published:2022-04 Issue:4 Volume:43 Page:521-524
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Myung-Su¹^ORCID,Yun Gyeong-Jun¹^ORCID,Kim Wu-Kang²^ORCID,Seo Myungsoo¹,Kim Da-Jin¹,Yu Ji-Man¹^ORCID,Han Joon-Kyu¹^ORCID,Hur Jae¹^ORCID,Lee Geon-Beom¹^ORCID,Kim Seong-Yeon³,Yun Dae-Hwan³,Choi Yang-Kyu¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea

2. Semiconductor Research and Development Center, Samsung Electronics, Hwasung, South Korea

3. SK Hynix Inc., Icheon, South Korea

Funder

National Research Foundation (NRF) of Republic of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9741089/09712303.pdf?arnumber=9712303

Reference23 articles.

1. Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors

2. Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

3. Demonstration of subthrehold swing smaller than 60 mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 gate stack;salvatore;IEDM Tech Dig,2008

4. Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

5. Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98 nm, SS$\rm_{for}$ =42 mV/dec, SS$\rm_{rev}$ =28 mV/dec, switch-OFF < 0.2 V, and hysteresis-free strategies;lee;IEDM Tech Dig,2015

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