Vertical Mos2Field-Effect Transistor via Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Vertical Mos2Field-Effect Transistor via Chemical Vapor Deposition

Published:2023-11-10 Issue: Volume: Page:1-3
ISSN:
Container-title:2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC)
language:
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Author:

Ling Yong Fa.¹,Luo Tao.¹,Li JieXin.¹,Lin Yin.¹,Zhang GuangXin.¹,Liao Qing.¹

Affiliation:

1. Guilin University Of Electronic Technology,Guangxi Key Laboratory of Precision Navigation Technology and Application,China

Funder

Guangxi Natural Science Foundation

Guangxi Science and Technology Planning

National Natural Science Foundation of China

Guilin University of Electronic Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10426787/10426807/10426873.pdf?arnumber=10426873

Reference8 articles.

1. Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors

2. A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure

3. Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

4. Vertical MoS2 transistors with sub-1-nm gate lengths

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