A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4984145
Reference19 articles.
1. The rise of graphene
2. Graphene transistors
3. Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors
4. Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect
5. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
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