A Highly Integrated GaN Power Module with Low Parasitic Inductance and High Thermal Performance

Author:

Kong Hang1,Yang Fengtao1,Yang Chengzi1,Zhang Yifan1,Wang Zhenyu1,Yao Yilong1,Wang Yan1,Wang Laili1

Affiliation:

1. School of Electrical Engineering Xi'an Jiaotong University,Xi'an,China

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effects of Encapsulant Properties on the Thermo-Mechanical Reliability of Double-Side Cooled Power Modules for Traction Inverters;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

2. GaN-HEMT Power Module Structure with Single-sided and Double-sided Aluminum-Clad Printed-Circuit Boards for Small Power Loop Inductance and High Cooling Performance;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

3. Power Loop Inductance Optimization Strategy for Eliminating Turn-off Switching Surge for GaN-HEMT Switching Device;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

4. Electrothermal Comprehensive Optimization Design Considerations of GaN Power Module;2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG);2023-06-09

5. A Single-Event Parasitic Inductance Characterization Method Based on Parallel Resonance Principle for Power Modules;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

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