Static and Dynamic Characterization of 3.3-kV SiC MOSFET Modules With and Without External Anti- Parallel SiC JBS Diode-Reference-Cited by-同舟云学术

Static and Dynamic Characterization of 3.3-kV SiC MOSFET Modules With and Without External Anti- Parallel SiC JBS Diode

Published:2022-10-09 Issue: Volume: Page:
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Container-title:2022 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Rahouma Ahmed¹,Oggier German G.²,Balda Juan Carlos¹,Kashyap Avinash³

Affiliation:

1. University of Arkansas,Department of Electrical Engineering,Fayetteville,AR,USA

2. Universidad Nacional de Rio Cuarto (UNRC) CONICET,Grupo de Electrónica Aplicada (GEA)/Instituto de Investigaciones en Tecnologias Energeticas y Materiales Avanzados (IITEMA),Rio Cuarto Cordoba,Argentina

3. Microchip Technology Inc.,Discrete and Power Management,Bend,OR,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9947299/9947300/09947544.pdf?arnumber=9947544

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