Impact of Gate Turn-Off Voltage on Body Diode Loss of SiC MOSFET and a Scheme to Improve Light Load Efficiency of SiC Converters
Author:
Affiliation:
1. Electrical Engineering, IIT Bombay,Mumbai,India
2. Electrical & Computer Engineering, The Ohio State University,Columbus,United States
Funder
National Centre for Photovoltaic Research and Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10384852/10384853/10384860.pdf?arnumber=10384860
Reference13 articles.
1. Characterization of body diodes in the-state-of-the-art SiC fets-are they good enough as freewheeling diodes?;Tiwari
2. Modern Semiconductor Devices for Integrated Circuit;Hu;Prentice Hall,2010
3. On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)
4. Application Note Design Recommendations for SiC MOSFETs;Revision 1.0
5. High Off-State Impedance Gate Driver of SiC MOSFETs for Crosstalk Voltage Elimination Considering Common-Source Inductance
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