A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide-Reference-Cited by-同舟云学术

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

Published:2022-08 Issue:8 Volume:43 Page:1227-1230
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Zhuo¹^ORCID,Wu Jixuan¹^ORCID,Mei Xiaoran¹,Huang Xingyu¹^ORCID,Saraya Takuya¹,Hiramoto Toshiro¹^ORCID,Takahashi Takanori²^ORCID,Uenuma Mutsunori²^ORCID,Uraoka Yukiharu²^ORCID,Kobayashi Masaharu¹^ORCID

Affiliation:

1. Institute of Industrial Science, The University of Tokyo, Tokyo, Japan

2. Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara, Japan

Funder

Japan Science and Technology Agency (JST) Super Highway

Strategic International Collaborative Research Program

Japan Society for the Promotion of Science (JSPS) KAKENHI

Taiwan Semiconductor Manufacturing Company (TSMC) Advanced Semiconductor Research Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9841091/09800906.pdf?arnumber=9800906

Reference28 articles.

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4. Novel vertical channel-all-around (CAA) IGZO FETs for 2T0C DRAM with high density beyond 4F2 by monolithic stacking;duan;IEDM Tech Dig,2021

5. Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating >103s retention, >1011 cycles endurance and $\text{L}\rm_{g}$ scalability down to 14 nm;belmonte;IEDM Tech Dig,2021

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