Gated Si-Tip With On-Tip Integrated Gate-All-Around Field Effect Transistor for Actively Controlled Field Electron Emission-Reference-Cited by-同舟云学术

Gated Si-Tip With On-Tip Integrated Gate-All-Around Field Effect Transistor for Actively Controlled Field Electron Emission

Published:2022-03 Issue:3 Volume:43 Page:466-469
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zeng Miaoxuan¹^ORCID,Huang Yifeng¹,Huang Yuan²,Chen Jun¹^ORCID,She Juncong¹^ORCID,Deng Shaozhi¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

2. School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, China

Funder

National Key Research Program of China

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9721042/09701322.pdf?arnumber=9701322

Reference19 articles.

1. Vertical nanowire array-based field effect transistors for ultimate scaling

2. Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

3. Non-uniaxial stress-assisted fabrication of nanoconstriction on vertical nanostructured Si

4. Two-Dimensional Self-Limiting Wet Oxidation of Silicon Nanowires: Experiments and Modeling

5. Self-modulated field electron emitter: Gated device of integrated Si tip-on-nano-channel

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