Phase-Change Controlled Magnetic Tunnel Junction for Multifunctional In-Sensor Computing-Reference-Cited by-同舟云学术

Phase-Change Controlled Magnetic Tunnel Junction for Multifunctional In-Sensor Computing

Published:2022-03 Issue:3 Volume:43 Page:482-485
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lv Chen¹^ORCID,Li Shen¹^ORCID,Yang Wei¹,Wei Guodong¹,Li Zhi¹,Lin Xiaoyang¹^ORCID,Zhao Weisheng¹^ORCID

Affiliation:

1. MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Fert Beijing Institute, Beihang University, Beijing, China

Funder

National Natural Science Foundation of China

International Collaboration Projects

Young Elite Scientists Sponsorship Program by the China Association for Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9721042/09702138.pdf?arnumber=9702138

Reference29 articles.

1. Light‐Regulated Mott Transition for On‐Demand Multilevel Memory Storage, Processing, and Energy Efficient Machine Vision

2. Infrared Gesture Recognition System Based on Near-Sensor Computing

3. Phase‐Transition‐Induced VO 2 Thin Film IR Photodetector and Threshold Switching Selector for Optical Neural Network Applications

4. Phase-transition-induced large magnetic anisotropy change in VO2/(Co/Pt)2 heterostructure

5. Reversible Switching of Interlayer Exchange Coupling through Atomically Thin VO2 via Electronic State Modulation

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