Negative Differential Resistance Effect in “Cold” Metal Heterostructure Diodes
Author:
Affiliation:
1. School of Electrical and Automation, Wuhan University, Wuhan, China
2. Department of Engineering, University of Cambridge, Cambridge, U.K
Funder
Wuhan University
Fundamental Research Funds for the Central Universities
Engineering and Physical Sciences Research Council
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9721042/09691329.pdf?arnumber=9691329
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4. Electronic properties and transistors of the NbS2–MoS2–NbS2 NR heterostructure
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