High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability-Reference-Cited by-同舟云学术

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

Published:2022-10 Issue:10 Volume:43 Page:1625-1628
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tang Shun-Wei¹,Huang Zhen-Hong¹,Chen Szu-Chia¹,Lin Wei-Syuan¹,de Jaeger Brice²,Wellekens Dirk²,Borga Matteo²^ORCID,Bakeroot Benoit³^ORCID,Decoutere Stefaan²^ORCID,Wu Tian-Li¹^ORCID

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. imec, Leuven, Belgium

3. Center for Microsystems Technology (CMST), imec, Leuven, Belgium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09856657.pdf?arnumber=9856657

Reference13 articles.

1. Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

2. Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

3. Origin of the red luminescence in Mg-doped GaN

4. Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing

5. Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias

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