3326-V Modulation-Doped Diamond MOSFETs
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Saga University, Saga, Japan
2. Adamant Namiki Precision Jewel Company Ltd., Tokyo, Japan
Funder
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9841091/09791371.pdf?arnumber=9791371
Reference25 articles.
1. Electronic and surface properties of H-terminated diamond surface affected by NO2 gas
2. Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance
3. Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties
4. Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3Passivation Layer
5. 345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond
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1. High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond;Advanced Science;2024-01-19
2. Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits;Topics in Applied Physics;2024
3. CVD Encapsulation of Laser-Graphitized Electrodes in Diamond Electro-Optical Devices;Photonics;2023-12-23
4. Stable AC Stress Operation (100 h) of NO2 p-Type Doped Diamond MOSFETs;IEEE Electron Device Letters;2023-10
5. Field-plated D3MOSFET design for breakdown voltage improvement;Diamond and Related Materials;2023-05
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