High-Voltage 1064 nm InGaAsP Multijunction Laser Power Converters-Reference-Cited by-同舟云学术

High-Voltage 1064 nm InGaAsP Multijunction Laser Power Converters

Published:2022-08 Issue:8 Volume:43 Page:1291-1294
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yin Jiajing¹^ORCID,Sun Yurun²,Wang Ancheng¹,Yu Shuzhen²,Wang Junsheng¹,Fu Qiuxue¹,Qin Jie¹,Han Yanhui¹,Zhang Wei²,Zhang Shuming²,Xue Cong³,Dong Jianrong²

Affiliation:

1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China

2. Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China

3. Gusu Laboratory of Materials, Suzhou, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9841091/09797718.pdf?arnumber=9797718

Reference33 articles.

1. Analysis of temperature coefficients for III-V multi-junction concentrator cells

2. Estimating Saturation Current Based on Junction Temperature and Bandgap

3. Investigation of spectral dependences of the absorption coefficient in InGaAs layers

4. Homojunction Solar Cells

5. On the temperature dependence of dual-junction laser power converters

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