Investigation of spectral dependences of the absorption coefficient in InGaAs layers-Reference-Cited by-同舟云学术

Investigation of spectral dependences of the absorption coefficient in InGaAs layers

Published:2017-03 Issue:3 Volume:62 Page:331-335
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Iakovleva N. I.,Nikonov A. V.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1064226917030226.pdf

Reference9 articles.

1. A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, Solid-State Photoelectronics. Photodiodes (Fizmatkniga, Moscow, 2011) [in Russian].

2. A. M. Filachev, I. I. Taubkin, and M. A. Trishenkov, State-of-the-Art and Main Lines of Development of Modern Photoelectronics (Fizmatkniga, Moscow, 2011) [in Russian].

3. K. O. Boltar, I. V. Chinareva, A. A. Lopukhin, and N. I. Yakovleva, Prikl. Fiz., No. 5, 10 (2013).

4. M. E. Belkin and A. S. Sigov, J. Commun. Technol. Electron. 54, 855 (2009).

5. V. V. Lebedeva, Experimental Optics (Mos. Gos. Univ., Moscow, 1994) [in Russian].

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