A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current<sub /> <sub /> <sub />-Reference-Cited by-同舟云学术

A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current

Published:2022-11 Issue:11 Volume:43 Page:1905-1908
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Zhuocheng¹^ORCID,Lin Zehao¹^ORCID,Liao Pai-Ying¹^ORCID,Askarpour Vahid²,Dou Hongyi³,Shang Zhongxia³,Charnas Adam¹^ORCID,Si Mengwei¹^ORCID,Alajlouni Sami¹^ORCID,Shakouri Ali¹,Wang Haiyan³,Lundstrom Mark¹^ORCID,Maassen Jesse²^ORCID,Ye Peide D.¹^ORCID

Affiliation:

1. Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA

2. Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Canada

3. School of Materials Science and Engineering, Purdue University, West Lafayette, IN, USA

Funder

Air Force Office of Scientific Research

Compute Canada

Natural Sciences and Engineering Research Council of Canada

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9927475/09903594.pdf?arnumber=9903594

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