Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors-Reference-Cited by-同舟云学术

Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors

Published:2022-06 Issue:6 Volume:43 Page:894-897
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Qian¹,Wang Lingfei¹^ORCID,Duan Xinlv¹^ORCID,Guo Jingrui¹^ORCID,Wang Zhaogui²,Huang Kailiang²,Feng Junxiao²,Sun Ying²,Jiao Guangfan²,Jing Weiliang²,Geng Di¹^ORCID,Li Ling¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Device & Integrated Technology, Beijing, China

2. Huawei Technologies Company Ltd., Shenzhen, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9780621/09758744.pdf?arnumber=9758744

Reference17 articles.

1. TCAD Simulation of Dual-Gate a-IGZO TFTs With Source and Drain Offsets

2. Electrical and optical properties of titanium oxynitride thin films

3. TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

4. Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation

5. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

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