Sub-ns Switching and Cryogenic-Temperature Performance of Mo-Based Perpendicular Magnetic Tunnel Junctions-Reference-Cited by-同舟云学术

Sub-ns Switching and Cryogenic-Temperature Performance of Mo-Based Perpendicular Magnetic Tunnel Junctions

Published:2022-08 Issue:8 Volume:43 Page:1215-1218
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lyu Deyuan¹^ORCID,Khanal Pravin²,Lv Yang¹^ORCID,Zhou Bowei²,Yun Hwanhui³,Jia Qi¹,Zink Brandon R.¹^ORCID,Fan Yihong¹,Mkhoyan K. Andre³^ORCID,Wang Weigang²,Wang Jian-Ping¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA

2. Department of Physics, The University of Arizona, Tucson, AZ, USA

3. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, USA

Funder

Defense Advanced Research Projects Agency (DARPA)

Minnesota Nano Center by the National Science Foundation through the National Nanotechnology Coordinated Infrastructure

Characterization Facility of University of Minnesota by National Science Foundation (NSF) through the UMN MRSEC

MRSEC Program and SMART, one of seven centers of nCORE, a Semiconductor Research Corporation Program, sponsored by National Institute of Standards and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/55/9841091/9798832-aam.pdf

Reference34 articles.

1. Thermal Effects in Spin-Torque Switching of Perpendicular Magnetic Tunnel Junctions at Cryogenic Temperatures

2. Quenching of Magnetoresistance by Hot Electrons in Magnetic Tunnel Junctions

3. Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions

4. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

5. A low temperature functioning CoFeB/MgO-based perpendicular magnetic tunnel junction for cryogenic nonvolatile random access memory

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