Understanding Interface-Controlled Resistance Drift in Superlattice Phase Change Memory-Reference-Cited by-同舟云学术

Understanding Interface-Controlled Resistance Drift in Superlattice Phase Change Memory

Published:2022-10 Issue:10 Volume:43 Page:1669-1672
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu Xiangjin¹^ORCID,Khan Asir Intisar¹^ORCID,Ramesh Pranav¹,Perez Christopher²^ORCID,Kim Kangsik³,Lee Zonghoon³,Saraswat Krishna¹,Goodson Kenneth E.²,Wong H.-S. Philip¹^ORCID,Pop Eric¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

2. Department of Mechanical Engineering, Stanford University, Stanford, CA, USA

3. Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, South Korea

Funder

Stanford Non-Volatile Memory Technology Research Initiative

Semiconductor Research Corporation

Institute for Basic Science

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09875368.pdf?arnumber=9875368

Reference29 articles.

1. A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer

2. Projected mushroom type phase-change memory;sarwat;Adv Funct Mater,2021

3. Interfacial phase-change memory

4. Ultralow–switching current density multilevel phase-change memory on a flexible substrate

5. Electro-Thermal Confinement Enables Improved Superlattice Phase Change Memory

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