Trench-Structured High-Current-Driving Aluminum-Doped Indium–Tin–Zinc Oxide Semiconductor Thin-Film Transistor-Reference-Cited by-同舟云学术

Trench-Structured High-Current-Driving Aluminum-Doped Indium–Tin–Zinc Oxide Semiconductor Thin-Film Transistor

Published:2022-10 Issue:10 Volume:43 Page:1677-1680
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Do Hyung¹^ORCID,Lee Kwang-Heum¹^ORCID,Lee Seung Hee¹^ORCID,Kim Junsung¹^ORCID,Yang Junghoon¹^ORCID,Kim Jingyu¹,Cho Seong-In¹^ORCID,Ji Kwang Hwan²,Hwang Chi-Sun³,Ko Park Sang-Hee¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea

2. LG Display Company Ltd., Seoul, South Korea

3. Electronics and Telecommunications Research Institute, Daejeon, South Korea

Funder

National Research Foundation of Korea (NRF) Grant through the Korean Government [Ministry of Science and ICT (MSIT)]

LG Display under LG Display (LGD)-Korea Advanced Institute of Science and Technology (KAIST) Incubation Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09868893.pdf?arnumber=9868893

Reference25 articles.

1. Implementation of In–Ga–Zn–O Thin-Film Transistors with Vertical Channel Structures Designed with Atomic-Layer Deposition and Silicon Spacer Steps

2. Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2 gate insulator

3. Defeating the trade-off between process complexity and electrical performance with vertical zinc oxide transistors

4. Dependence of transfer characteristic of amorphous oxide semiconductor thin-film transistors on the channel thickness evaluated by device simulation;matsuda;Proc 19th Int Workshop Act -Matrix Flatpanel Displays Devices,2012

5. Influence of Oxide Semiconductor Thickness on Thin-Film Transistor Characteristics

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3. Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration;Nanotechnology;2023-02-03

4. Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors;Journal of Materials Chemistry C;2023