A High-Quality-Factor Aluminum Nitride Resonator with Silicon Dioxide Composite Structure
Author:
Affiliation:
1. Shanghai University,School of Microelectronics,Shanghai,China
2. Shanghai Normal University,College of Information, Mechanical and Electrical Engineering,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10306337/10306342/10308012.pdf?arnumber=10308012
Reference9 articles.
1. A High Coupling Coefficient 2.3-GHz AlN Resonator for High Band LTE Filtering Application
2. Analysis of piezoelectric boundary acoustic wave in Cu electrode/Y-cut X-propagating LiNbO3 substrate structure partially covered with SiO2
3. A full-wave analysis of surface acoustic waves propagating on a SiO2 overlay/metal grating/rotated Y-cut X-propagating LiNbO3 substrate structure;wang;Jpn J Appl Phys,2009
4. Ultralow Acoustic Loss Micromachined Butterfly Lamb Wave Resonators on AlN Plates
5. High-Q aluminum nitride Lamb wave resonators with biconvex edges
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