Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits-Reference-Cited by-同舟云学术

Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits

Published:2003-12 Issue:6 Volume:50 Page:2184-2190
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Reed R.A.¹,Marshall P.W.,Pickel J.C.,Carts M.A.,Fodness B.,Niu G.,Fritz K.,Vizkelethy G.,Dodd P.E.,Irwin T.,Cressler J.D.,Krithivasan R.,Riggs P.,Prairie J.,Randall B.,Gilbert B.,LaBel K.A.

Affiliation:

1. NASA Goddard Space Flight Center, Greenbelt, MD, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/28269/01263859.pdf?arnumber=1263859

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