Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Abstract

In this paper, the effects of different factors, including the heavy ions striking location, incident angle, linear energy transfer (LET) value, projected range, ambient temperature and bias state, on the single event transient introduced by heavy ions irradiation in the SiGe heterojunction bipolar transistor (HBT) were investigated by the TCAD simulation. The results show that the current transient peak value, collected charge and carrier type of each terminal are changed by the striking location, incident angle and bias state. The current transient peak value and collected charge increase with the LET value, while they decrease with the ambient temperature. When heavy ions vertically irradiate the collector and substrate, the current transient peak value and collected charge increase with the projected range; therefore, the species of heavy ions should be considered in studying the single event effects of the SiGe HBT induced by heavy ions irradiation. The microphysical mechanism of these factors influencing the single event effects of the SiGe HBT is discussed in this work.