Impact of gate workfunction fluctuation on FinFET standard cells

Author:

Meinhardt Cristina,Zimpeck Alexandra L.,Reis Ricardo

Publisher

IEEE

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. ML-TIME: ML-driven Timing Analysis of Integrated Circuits in the Presence of Process Variations and Aging Effects;Proceedings of the 2024 ACM/IEEE International Symposium on Machine Learning for CAD;2024-09-09

2. Suppression of Threshold Voltage Variation by TiN Surface Treatment for N-FinFETs With Very Thin Work Function Metal Layers;IEEE Transactions on Electron Devices;2023-04

3. Robustness Analysis of 3–2 Adder Compressor Designed in 7-nm FinFET Technology;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-03

4. Using Lyapunov Exponents to Estimate Sensitivity to Process Variability;2023 IEEE 14th Latin America Symposium on Circuits and Systems (LASCAS);2023-02-27

5. Current Behavior on Process Variability Aware FinFET Inverter Designs;2021 IEEE 12th Latin America Symposium on Circuits and System (LASCAS);2021-02-21

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