Author:
Nuttinck S.,Gebara E.,Laskar J.,Harris M.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by
17 articles.
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1. Noise in Semiconductor Devices;Synthesis Lectures on Engineering, Science, and Technology;2023-10-17
2. GaN HEMT Modeling versus Bias Point and Gate Width;2023 58th International Scientific Conference on Information, Communication and Energy Systems and Technologies (ICEST);2023-06-29
3. Effect of material composition on noise performance of sub-micron high electron mobility transistor;Microsystem Technologies;2020-01-04
4. Investigation of gate induced noise in E-mode GaN MOS-HEMT and its effect on noise parameters;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-01-08
5. Analytical high frequency GaN HEMT model for noise simulations;Semiconductor Science and Technology;2017-11-07