High-performance oscillators and power combiners with InP Gunn devices at 260-330 GHz-Reference-Cited by-同舟云学术

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High-performance oscillators and power combiners with InP Gunn devices at 260-330 GHz

Published:2006-05 Issue:5 Volume:16 Page:284-286
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Eisele H.,Kamoua R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/34136/01626262.pdf?arnumber=1626262

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 56 GHz InP VCO for Use in 112 GBaud (112 GBit/s NRZ or 224 GBit/s PAM-4) InP Integrated Optical Receiver Front-End CDR Block;2023 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE);2023-09-24

2. Nanoplasma-enabled picosecond switches for ultrafast electronics;Nature;2020-03-25

3. Ohmic contacts based on Pd to indium phosphide Gunn diodes;Semiconductor Physics Quantum Electronics and Optoelectronics;2015-09-30

4. Gunn or Transferred-Electron Devices;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-09-16

5. Invited Review Article: Current State of Research on Biological Effects of Terahertz Radiation;Journal of Infrared, Millimeter, and Terahertz Waves;2011-06-07

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