Explaining a Recent Observation of Bistability in the Oscillatory Response of a Pulse-Driven ReRAM-Reference-Cited by-同舟云学术

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Explaining a Recent Observation of Bistability in the Oscillatory Response of a Pulse-Driven ReRAM

Published:2023-09-28 Issue: Volume: Page:1-6
ISSN:
Container-title:2023 18th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA)
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Author:

Ascoli A.¹,Schmitt N.¹,Messaris I.¹,Demirkol A.S.¹,Ntinas V.¹,Prousalis D.¹,Tetzlaff R.¹,Menzel S.²,Rana V.³,Nikolaidis S.⁴,Chua L.⁵

Affiliation:

1. Institute of Circuits and Systems, TU Dresden,Dresden,Germany

2. Peter Grünberg Institut 7 (PGI-7), Forschungszentrum Jülich GmbH,Jülich,Germany

3. Peter Grünberg Institut 7 (PGI-10), Forschungszentrum Jülich GmbH,Jülich,Germany

4. Aristotle University of Thessaloniki,Department of Physics,Thessaloniki,Greece

5. University of California Berkeley,Department of Electrical Engineering and Computer Sciences,Berkeley,California,US

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10651575/10652617/10652852.pdf?arnumber=10652852

Reference20 articles.

1. Five non-volatile memristor enigmas solved

2. Nonlinear Circuits and Systems with Memristors - Analogue Computing via the Flux-Charge Analysis Method;Corinto;Springer,2020

3. Analysis and Design of Bio-Inspired Circuits With Locally-Active Memristors

4. A Deep Study of Resistance Switching Phenomena in TaO _x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

5. Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOx Bilayer ReRAM Cells

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