A Deep Study of Resistance Switching Phenomena in TaO <sub>x</sub> ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification-Reference-Cited by-同舟云学术

A Deep Study of Resistance Switching Phenomena in TaO _x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Published:2022-08 Issue:8 Volume:8 Page:2200182
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Ascoli Alon¹^ORCID,Menzel Stephan²,Rana Vikas³,Kempen Tim³,Messaris Ioannis¹,Demirkol Ahmet Samil¹,Schulten Michael⁴,Siemon Anne⁴,Tetzlaff Ronald¹

Affiliation:

1. Technische Universität Dresden School of Engineering Sciences Faculty of Electrical and Computer Engineering Institute of Principles of Electrical and Electronic Engineering (IEE) Chair of Fundamentals of Electrical Engineering Toeplerbau, Mommsenstraße 12 01069 Dresden Germany

2. Peter Grünberg Institut 7 (PGI‐7) Forschungszentrum Jülich GmbH Wilhelm‐Johnen‐Strasse 52425 Jülich Germany

3. Peter Grünberg Institut 10 (PGI‐10) Forschungszentrum Jülich GmbH Wilhelm‐Johnen‐Strasse 52425 Jülich Germany

4. Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen University Sommerfeldstraße 24 52074 Aachen Germany

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200182

Reference59 articles.

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4. Memristor-The missing circuit element

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