Microstructure-induced Schottky barrier effects in barium strontium titanate (BST) thin films for 16 and 64 Mbit (DRAM cells)-Reference-Cited by-同舟云学术

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Microstructure-induced Schottky barrier effects in barium strontium titanate (BST) thin films for 16 and 64 Mbit (DRAM cells)

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Container-title:ISAF '92: Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics
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Author:

Scott J.F.,Azuma M.,Fujii E.,Otsuki T.,Kano G.,Scott M.C.,Paz de Araujo C.A.,McMillan L.D.,Roberts T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/1016/7437/00300707.pdf?arnumber=300707

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3. Simple oxalate precursor route for the preparation of brain-like shaped barium–strontium titanate: Ba0.6Sr0.4TiO3;Materials Chemistry and Physics;2008-12

4. Preparation and Dielectric Properties of Mn-Doped Ba0.6Sr0.4TiO3-MgTiO3 Composite Ceramics;Acta Physico-Chimica Sinica;2008-08

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