Modelling GaN-HEMT Dynamic ON-state Resistance in High Frequency Power Converter-Reference-Cited by-同舟云学术

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Modelling GaN-HEMT Dynamic ON-state Resistance in High Frequency Power Converter

Published:2020-03 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Li Ke,Videt Arnaud,Idir Nadir,Evans Paul,Johnson Mark

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9121924/9123991/09124513.pdf?arnumber=9124513

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Flexible Setup for Dynamic On-State Resistance Measurements of GaN HEMTs With One-Factor-at-a-Time Capability;IEEE Transactions on Power Electronics;2024-06

2. A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution;IEEE Transactions on Power Electronics;2024-01

3. Methodology for Extracting Dynamic On-Resistance Testing Data in Gallium Nitride-Based Power Transistors;2023 3rd International Conference on Smart Cities, Automation & Intelligent Computing Systems (ICON-SONICS);2023-12-06

4. Dynamic on resistance measurement of high power GaN under hard/passive switching;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

5. Virtual Junction Temperature Estimation during Dynamic Power Cycling Tests;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

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