Design Principle of Channel Material for Oxide-Semiconductor Field-Effect Transistor with High Thermal Stability and High On-current by Fluorine Doping-Reference-Cited by-同舟云学术

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Design Principle of Channel Material for Oxide-Semiconductor Field-Effect Transistor with High Thermal Stability and High On-current by Fluorine Doping

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Kawai H.,Fujiwara H.,Kataoka J.,Saito N.,Ueda T.,Enda T.,Ishihara T.,Ikeda K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372121.pdf?arnumber=9372121

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel;IEEE Transactions on Electron Devices;2024-05

2. The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization;IEEE Transactions on Electron Devices;2024-05

3. Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage;IEEE Transactions on Electron Devices;2024-04

4. True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO;Advanced Materials;2023-03-31

5. Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment;RSC Advances;2023

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