10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility-Reference-Cited by-同舟云学术

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10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Li Shengman,Gu Chengru,Li Xuefei,Huang Ru,Wu Yanqing

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371966.pdf?arnumber=9371966

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors;Nanotechnology;2024-08-14

2. BEOL-Compatible High-Performance Indium-Tin-Oxide Transistors Enabled by Quantum Confinement-Engineered Properties;IEEE Transactions on Electron Devices;2024-08

3. High-Voltage Indium-Tin-Oxide Thin-Film Transistors Possessing Drift Region Capped With Indium-Tin-Oxide Layer;IEEE Electron Device Letters;2024-07

4. High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation;Nano Letters;2024-06-05

5. BEOL Compatible Ultra-Thin ITO Transistor With Performance Recoverable Capability by in Situ Electrothermal Annealing;IEEE Electron Device Letters;2024-05

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