Calculation of Cross Section for Ion-Induced SEU Through Direct Ionization in Nanometric Silicon Devices With Small Critical Energy-Reference-Cited by-同舟云学术

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Calculation of Cross Section for Ion-Induced SEU Through Direct Ionization in Nanometric Silicon Devices With Small Critical Energy

Published:2013-08 Issue:4 Volume:60 Page:3092-3103
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Murat Michael,Barak Joseph,Akkerman Avraham

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/6579689/06575213.pdf?arnumber=6575213

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research of X-ray induced single event soft errors in 45 nm SRAM;Japanese Journal of Applied Physics;2018-11-27

2. Insight into the dynamics of electrons ejected by energetic ions in silicon and its relation to the basics of the inelastic thermal spike model;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-10

3. Role of Elastic Scattering of Protons, Muons, and Electrons in Inducing Single-Event Upsets;IEEE Transactions on Nuclear Science;2017-10

4. Effect of the Radial Ionization Profile of Proton on SEU Sensitivity of Nanoscale SRAMs;IEEE Transactions on Nuclear Science;2015-12

5. SEU Rate in Avionics: From Sea Level to High Altitudes;IEEE Transactions on Nuclear Science;2015-12

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