Investigation on the Response of TaO$_{\rm x}$-based Resistive Random-Access Memories to Heavy-Ion Irradiation-Reference-Cited by-全球学者库

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Investigation on the Response of TaO$_{\rm x}$-based Resistive Random-Access Memories to Heavy-Ion Irradiation

Published:2013-12 Issue:6 Volume:60 Page:4520-4525
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Tan Fei,Huang Ru,An Xia,Cai Yimao,Pan Yue,Wu Weikang,Feng Hui,Zhang Xing,Wang YangYuan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/6678952/06678327.pdf?arnumber=6678327

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Materials and devices as solutions to computational problems in machine learning;Nature Electronics;2023-07-26

2. Single-Event Effects Induced by Heavy Ions in 40nm Resistive Random Access Memory;2022 IEEE 6th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC );2022-10-03

3. The effect of external stimuli on the performance of memristive oxides;Metal Oxides for Non-volatile Memory;2022

4. Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects;IEEE Transactions on Nuclear Science;2021-08

5. Heavy Ion Irradiation Hardening Study on 4kb arrays HfO₂-based OxRAM;2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2020-10

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