Short Circuit Study of 600 V GaN GITs-Reference-Cited by-同舟云学术

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Short Circuit Study of 600 V GaN GITs

Published:2019-10 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Williford Paige,Wang Fred,Bala Sandeep,Xu Jing

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8975928/8998758/08998919.pdf?arnumber=8998919

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and Failure Mechanism Study of Ohmic Gate GaN HEMT under Overcurrent Stress;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability;IEEE Electron Device Letters;2023-10

3. A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

4. Short-Circuit Failure Modes and Mechanism Investigation of Ohmic-Gate GaN HEMT;IEEE Transactions on Electron Devices;2023

5. Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver;2022 IEEE Applied Power Electronics Conference and Exposition (APEC);2022-03-20

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