Short Circuit Study of 600 V GaN GITs
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8975928/8998758/08998919.pdf?arnumber=8998919
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension Towards Enhanced Short-Circuit Reliability;IEEE Electron Device Letters;2023-10
2. A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
3. Short-Circuit Failure Modes and Mechanism Investigation of Ohmic-Gate GaN HEMT;IEEE Transactions on Electron Devices;2023
4. Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver;2022 IEEE Applied Power Electronics Conference and Exposition (APEC);2022-03-20
5. Short-Circuit Capability with GaN HEMTs : Invited;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03
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