Investigation of ESD Protection in SiC BCD Process
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8975928/8998758/08998959.pdf?arnumber=8998959
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation on ESD Robustness of 20-V GGNMOS and GDPMOS in 4H-SiC Process with 100-ns TLP Pulse;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04
2. Different Proposed Analysis with TCAD for Catastrophic Large Area Failure due to Radiation Stress on 4H-SiC Schottky Diode;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07
3. A 4H-SiC MOSFET-Based ESD Protection With Improved Snapback Characteristics for High-Voltage Applications;IEEE Transactions on Power Electronics;2021-05
4. 4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications;IEEE Journal of the Electron Devices Society;2021
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