Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET-Reference-Cited by-同舟云学术

Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET

Author:

Yu Cheng-Hao¹,Bao Meng-Tian¹^ORCID,Wang Ying²^ORCID,Guo Hao-Min¹,Han Yun-Cheng³,Hu Hai-Fan⁴

Affiliation:

1. Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China

2. School of Information Science and Technology, Dalian Maritime University, Dalian, China

3. Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, China

4. X Lab, the Second Academy of CASIC, Beijing, China

Funder

National Natural Science Foundation of China

Zhejiang Provincial Natural Science Foundation of China

Anhui Provincial Key Research and Development Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

Reference38 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

4. Comparative Study of Single-Event Effect Tolerance Between Planar and Trench SiC Power MOSFETs;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24