Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI
Author:
Affiliation:
1. GlobalFoundries, Dresden, Germany
2. Reconfigurable Devices Group, NaMLab gGmbH, Dresden, Germany
Funder
Globalfoundries Dresden Module One within the framework Important Project of Common European Interest
Federal Ministry for Economics and Energy
State of Saxony
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/7298/9876000/09797872.pdf?arnumber=9797872
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4. Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors
5. SOI thermal impedance extraction methodology and its significance for circuit simulation
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