A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process—Part II: A Novel Analysis of Thermal Breakdown-Reference-Cited by-同舟云学术

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A Back-Wafer Contacted Silicon-On-Glass Integrated Bipolar Process—Part II: A Novel Analysis of Thermal Breakdown

Published:2004-01 Issue:1 Volume:51 Page:51-62
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Nenadovic N.,d'Alessandro V.,Nanver L.K.,Tamigi F.,Rinaldi N.,Slotboom J.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/28140/01258145.pdf?arnumber=1258145

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches;Electronics;2023-08-16

2. Methods for Extracting the Temperature- and Power-Dependent Thermal Resistance for SiGe and III-V HBTs From DC Measurements: A Review and Comparison Across Technologies;IEEE Transactions on Electron Devices;2022-08

3. Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update;Energies;2022-07-28

4. Analysis of Electrothermal Effects in Devices and Arrays in InGaP/GaAs HBT Technology;Electronics;2021-03-23

5. Analysis of Electrothermal and Impact-Ionization Effects in Bipolar Cascode Amplifiers;IEEE Transactions on Electron Devices;2018-02

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