Temperature dependence of breakdown and avalanche multiplication in In/sub 0.53/Ga/sub 0.47/As diodes and heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Temperature dependence of breakdown and avalanche multiplication in In/sub 0.53/Ga/sub 0.47/As diodes and heterojunction bipolar transistors

Published:2003-10 Issue:10 Volume:50 Page:2021-2026
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Yee M.,Ng W.K.,David J.P.R.,Houston P.A.,Tan C.H.,Krysa A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/27630/01232919.pdf?arnumber=1232919

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correcting the Output Conductance for Self-Heating in InAlAs/InGaAs HBTs;IEEE Transactions on Electron Devices;2006-09

2. Positive and negative temperature dependences of electron-impact ionization in In0.53Ga0.47As;Journal of Applied Physics;2005-07-15

3. Modeling of the semiconductor devices with the IET and involving the impact ionization;Proceedings of LFNM 2005. 7th International Conference on Laser and Fiber-Optical Networks Modeling, 2005.;2005

4. Temperature dependence of electron impact ionization in In0.53Ga0.47As;Applied Physics Letters;2004-03-29

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