Positive and negative temperature dependences of electron-impact ionization in In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1993755
Reference14 articles.
1. Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors
2. Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBT's grown by MBE
3. Positive temperature dependence of the electron impact ionization coefficient in In/sub 0.53/Ga/sub 0.47/As/InP HBTs
4. Temperature dependence of breakdown and avalanche multiplication in In/sub 0.53/Ga/sub 0.47/As diodes and heterojunction bipolar transistors
5. Temperature dependent low-field electron multiplication in In0.53Ga0.47As
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1. Infrared avalanche photodiodes from bulk to 2D materials;Light: Science & Applications;2023-08-31
2. Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP;IEEE Journal of Selected Topics in Quantum Electronics;2022-03
3. Generation of THz signals based on quasi-ballistic electron reflections in double-heterojunction structures;Semiconductor Science and Technology;2007-07-20
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